A low power phase change memory using thermally confined TaN/TiN bottom electrode

J. Y. Wu, M. Breitwisch, S. Kim, T. H. Hsu, R. Cheek, P. Y. Du, Jing Li, E. K. Lai, Y. Zhu, T. Y. Wang, H. Y. Cheng, A. Schrott, E. A. Joseph, R. Dasaka, S. Raoux, M. H. Lee, H. L. Lung, C. Lam
DOI
Type
Conference paper
Publication
2011 International Electron Devices Meeting (IEDM), Dec, 2011

(Acceptance Rate*: underline33%)

conference conductors (electric) electrodes heat losses integrated circuit reliability low-power electronics phase change memories tantalum compounds thermal insulation titanium compounds tan-tin current 30 mua electrical conductivity electrothermal simulation low power pcm low power phase change memory size 1.5 nm size 39 nm storage capacity 256 mbit thermal barrier thermal insulation thermally confined bottom electrode electrodes heating phase change memory solids thermal resistance tin