Hangbing Lv

Publications (3)

• Nb(1-x)O2 based Universal Selector with Ultra-high Endurance (>10^12), high speed (10ns) and Excellent Vth Stability (2019). 2019 IEEE Symposium on VLSI Technology, Jun, 2019
• Fully CMOS compatible 3D vertical RRAM with self-aligned self-selective cell enabling sub-5nm scaling (2016). 2016 IEEE Symposium on VLSI Technology, June, 2016
• Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells (2015). 2015 IEEE International Electron Devices Meeting (IEDM), Dec, 2015