integrated circuit design

A compact model for RRAM including random telegraph noise

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)

Variable-Latency Adder (VL-Adder) Designs for Low Power and NBTI Tolerance

Novel Variation-Aware Circuit Design of Scaled LTPS TFT for Ultra low Power, Low-Cost Applications