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random-access storage
Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices
A non-volatile look-up table design using PCM (phase-change memory) cells
(Acceptance Rate: underline28%, 115 out of 409)
Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)
Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement
(Acceptance Rate: underline23%, 147 out of 639)
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