random-access storage

Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

A non-volatile look-up table design using PCM (phase-change memory) cells

(Acceptance Rate: underline28%, 115 out of 409)

Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)

Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement

(Acceptance Rate: underline23%, 147 out of 639)