arrays

1 Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (INVITED)

This work demonstrates the first fabricated 1 Mb nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in …

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

A case for small row buffers in non-volatile main memories

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention in …

The impact of melting during reset operation on the reliability of phase change memory

Post-silicon calibration of analog CMOS using phase-change memory cells

(Acceptance Rate: underline38%, 121 out of 314)

Demonstration of CAM and TCAM Using Phase Change Devices