Post-silicon calibration of analog CMOS using phase-change memory cells

conference cmos analogue integrated circuits antimony compounds calibration chalcogenide glasses comparators (circuits) elemental semiconductors germanium compounds phase change memories redundancy silicon tellurium compounds ge2sb2te5 ibm cmos technology pcram mushroom cells si analog cmos capacitance 4.41 ff combinatorial redundancy digital calibration embedded gst nonvolatile phase-change random access memory cells offset-minimized cmos comparator post-manufacturing calibration post-silicon calibration power 55.42 muw size 90 nm switchable resistances voltage 1 v arrays cmos integrated circuits calibration generators phase change random access memory redundancy resistance