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failure analysis
Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices
Optimization of programming current on endurance of phase change memory
Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)
Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement
(Acceptance Rate: underline23%, 147 out of 639)
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