Optimization of programming current on endurance of phase change memory

S. Kim, P. Y. Du, Jing Li, M. Breitwisch, Y. Zhu, S. Mittal, R. Cheek, T. H. Hsu, M. H. Lee, A. Schrott, S. Raoux, H. Y. Cheng, S. C. Lai, J. Y. Wu, T. Y. Wang, E. A. Joseph, E. K. Lai, A. Ray, H. L. Lung, C. Lam
DOI
Type
Conference paper
Publication
Proceedings of Technical Program of 2012 VLSI Technology, System and Application (VLSI-TSA), April, 2012
conference failure analysis phase change memories reset current margin endurance cycles endurance failure modes material segregation effect open failure optimization phase change memory phase-dependent open-failure mechanisms programming conditions programming current stuck-set failure characteristic curves current density optimization phase change materials phase change memory programming resistance