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integrated circuit reliability
A compact model for RRAM including random telegraph noise
1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)
This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …
A low power phase change memory using thermally confined TaN/TiN bottom electrode
(Acceptance Rate*: underline33%)
Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
(Acceptance Rate*: underline33%)
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