Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

Xiao Zhang, Jing Li, M. Grubbs, M. Deal, B. Magyari-Köpe, B. M. Clemens, Y. Nishi
DOI
Type
Conference paper
Publication
2009 IEEE International Electron Devices Meeting (IEDM), Dec, 2009

(Acceptance Rate*: underline33%)

conference mos integrated circuits mosfet sram chips integrated circuit metallisation integrated circuit reliability work function sram reliability dual metal gate mosfet grain orientation difference metal grain work function variability polycrystalline metal gate size 22 nm charge carrier density circuit analysis electrodes fluctuations high k dielectric materials mosfets predictive models random access memory resource description framework semiconductor process modeling