Home
News
PI & Lab Director
Research
Projects
Publications
Talks
Courses
Sponsors
Contact & Openings
mosfets
Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices
Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
(Acceptance Rate*: underline33%)
Variable-latency adder (VL-adder): new arithmetic circuit design practice to overcome NBTI
(Acceptance Rate: underline39%, 74 out of 192)
Cite
×