Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

(Acceptance Rate*: underline33%)

Variable-latency adder (VL-adder): new arithmetic circuit design practice to overcome NBTI

(Acceptance Rate: underline39%, 74 out of 192)