Home
News
PI & Lab Director
Research
Projects
Publications
Talks
Courses
Sponsors
Contact & Openings
predictive models
Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability
(Acceptance Rate*: underline33%)
Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement
(Acceptance Rate: underline23%, 147 out of 639)
Cite
×