size 90 nm

1 Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (INVITED)

This work demonstrates the first fabricated 1 Mb nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in …

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

Post-silicon calibration of analog CMOS using phase-change memory cells

(Acceptance Rate: underline38%, 121 out of 314)

A non-volatile look-up table design using PCM (phase-change memory) cells

(Acceptance Rate: underline28%, 115 out of 409)

A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory