Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells

Qing Luo, Xiaoxin Xu, Hongtao Liu, Hangbing Lv, Tiancheng Gong, Shibing Long, Qi Liu, Haitao Sun, Writam Banerjee, Ling Li, Jianfeng Gao, Nianduan Lu, Steve S. Chung, Jing Li, Ming Liu
DOI
Type
Conference paper
Publication
2015 IEEE International Electron Devices Meeting (IEDM), Dec, 2015

(Acceptance Rate*: underline33%)

conference hafnium compounds ionic conductivity leakage currents mixed conductivity resistive ram 3d vertical rram hfo2 hfo2/mixed ionic and electronic conductor bilayer four-layer v-rram array high selectivity nonlinearity operation current self-compliance memory cells self-selective cell ultra low-leakage ultra-low half-select leakage hafnium compounds leakage currents optical switches resistance three-dimensional displays tin