phase change materials

Enabling phase-change memory for data-centric computing: Technology, circuitand system (INVITED)

1 Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (INVITED)

This work demonstrates the first fabricated 1 Mb nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in …

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

A case for small row buffers in non-volatile main memories

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention in …

Optimization of programming current on endurance of phase change memory

Resistance drift in phase change memory (INVITED)

The impact of melting during reset operation on the reliability of phase change memory

Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

(Acceptance Rate*: underline33%)

Materials engineering for Phase Change Random Access Memory

A non-volatile look-up table design using PCM (phase-change memory) cells

(Acceptance Rate: underline28%, 115 out of 409)