Materials engineering for Phase Change Random Access Memory

Simone Raoux, Huai-Yu Cheng, Jury Sandrini, Jing Li, Jean Jordan-Sweet
DOI
Type
Conference paper
Publication
2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding (NVMTS), Nov, 2011
conference x-ray diffraction antimony alloys crystallisation germanium alloys phase change materials phase change memories tellurium alloys gesbte amorphous phase crystallization temperature electrical contrast materials ewngineering phase change random access memory rhombohedral phase temperature 200 degc time resolved x-ray diffraction phase change materials phase change random access memory