random access memory

Recent progress in RRAM technology: From compact models to applications (INVITED)

Enabling phase-change memory for data-centric computing: Technology, circuitand system (INVITED)

1 Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (INVITED)

This work demonstrates the first fabricated 1 Mb nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in …

Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

A case for small row buffers in non-volatile main memories

DRAM-based main memories have read operations that destroy the read data, and as a result, must buffer large amounts of data on each array access to keep chip costs low. Unfortunately, system-level trends such as increased memory contention in …

Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)

Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

(Acceptance Rate*: underline33%)

Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement

Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement

(Acceptance Rate: underline23%, 147 out of 639)