phase change memories

Enabling phase-change memory for data-centric computing: Technology, circuitand system (INVITED)

1 Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (INVITED)

This work demonstrates the first fabricated 1 Mb nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in …

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

Optimization of programming current on endurance of phase change memory

Resistance drift in phase change memory (INVITED)

The impact of melting during reset operation on the reliability of phase change memory

A low power phase change memory using thermally confined TaN/TiN bottom electrode

(Acceptance Rate*: underline33%)

Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

(Acceptance Rate*: underline33%)

Materials engineering for Phase Change Random Access Memory

Post-silicon calibration of analog CMOS using phase-change memory cells

(Acceptance Rate: underline38%, 121 out of 314)