conference

Resistance drift in phase change memory (INVITED)

The impact of melting during reset operation on the reliability of phase change memory

A low power phase change memory using thermally confined TaN/TiN bottom electrode

(Acceptance Rate*: underline33%)

Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

(Acceptance Rate*: underline33%)

Materials engineering for Phase Change Random Access Memory

Post-silicon calibration of analog CMOS using phase-change memory cells

(Acceptance Rate: underline38%, 121 out of 314)

A non-volatile look-up table design using PCM (phase-change memory) cells

(Acceptance Rate: underline28%, 115 out of 409)

A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory

Demonstration of CAM and TCAM Using Phase Change Devices

Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability

(Acceptance Rate*: underline33%)