low power electronics

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

This work demonstrates the first fabricated nonvolatile TCAM using 2-transistor/2-resistive-storage (2T-2R) cells to achieve 10× smaller cell size than SRAM-based TCAMs at the same technology node. The test chip was designed and fabricated in IBM …

A low power phase change memory using thermally confined TaN/TiN bottom electrode

(Acceptance Rate*: underline33%)

Variation Estimation and Compensation Technique in Scaled LTPS TFT Circuits for Low-Power Low-Cost Applications

Poly-Si Thin-Film Transistors: An Efficient and Low-Cost Option for Digital Operation

Variable-latency adder (VL-adder): new arithmetic circuit design practice to overcome NBTI

(Acceptance Rate: underline39%, 74 out of 192)

High Performance and Low Power Electronics on Flexible Substrate

(Acceptance Rate*: underline13%)

low power electronics

1Mb 0.41 um^2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing (Highlight Paper of the Year)

A low power phase change memory using thermally confined TaN/TiN bottom electrode

Variation Estimation and Compensation Technique in Scaled LTPS TFT Circuits for Low-Power Low-Cost Applications

Poly-Si Thin-Film Transistors: An Efficient and Low-Cost Option for Digital Operation

Variable-latency adder (VL-adder): new arithmetic circuit design practice to overcome NBTI

High Performance and Low Power Electronics on Flexible Substrate

Novel Variation-Aware Circuit Design of Scaled LTPS TFT for Ultra low Power, Low-Cost Applications