Resistance drift in phase change memory (INVITED)

Jing Li, Binquan Luan, Chung Lam
DOI
Type
Conference paper
Publication
2012 IEEE International Reliability Physics Symposium (IRPS), April, 2012
conference circuit reliability molecular dynamics method phase change memories mlc pcm sr amorphous chalcogenide material atomic structure material engineering mitigation technique phase change memory physics model quantum molecular dynamic simulation reliability issue structural relaxation time dependent resistance drift annealing kinetic theory phase change materials resistance strontium temperature measurement drift multi-level cell phase change memory structural relaxation
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Jing Li
Eduardo D. Glandt Faculty Fellow and Associate Professor, Co-director for CyberSavvy Center

Attracted to all the big problems in computer system across the stack regardless the specific sub-areas.