The impact of melting during reset operation on the reliability of phase change memory

Pei-Ying Du, J. Y. Wu, T. H. Hsu, M. H. Lee, T. Y. Wang, H. Y. Cheng, E. K. Lai, S. C. Lai, H. L. Lung, S. Kim, M. J. BrightSky, Y. Zhu, S. Mittal, R. Cheek, S. Raoux, E. A. Joseph, A. Schrott, Jing Li, Chung Lam
DOI
Type
Conference paper
Publication
2012 IEEE International Reliability Physics Symposium (IRPS), April, 2012
conference arrays circuit reliability electromigration melting phase change memories segregation gst-based phase change memory reset melting healing effect set induced damage set operation control circuits electromigration large test chips operation impact phase change memory reliability phase segregation reset operation conductivity electromigration maintenance engineering phase change materials phase change memory resistance tin endurance reset operation electromigration melting phasechange memory (pcm) reliability segregation