Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (Best Paper)

Jing Li, Patrick Ndai, Ashish Goel, Sayeef Salahuddin, Kaushik Roy
DOI
Type
Journal article
Publication
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 18, (12), 1710–1723
journal integrated circuit design magnetic storage random-access storage high memory yield parametric failures process variations robust spin-torque transfer magnetic ram circuit stability costs failure analysis flash memory magnetic circuits performance analysis random access memory read-write memory robustness scalability spin-torque transfer (stt) magnetic ram (mram) memory yield parametric failures
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Jing Li
Eduardo D. Glandt Faculty Fellow and Associate Professor, Co-director for CyberSavvy Center

Attracted to all the big problems in computer system across the stack regardless the specific sub-areas.