Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

Jing Li, Binquan Luan, T. H. Hsu, Y. Zhu, G. Martyna, D. Newns, H. Y. Cheng, S. Raoux, H. L. Lung, C. Lam
DOI
Type
Conference paper
Publication
2011 International Electron Devices Meeting (IEDM), Dec, 2011

(Acceptance Rate*: underline33%)

conference amorphous semiconductors antimony alloys atomic structure germanium alloys phase change materials phase change memories tellurium alloys ge sb te amorphous germanium atomic structure drift-insensitive phase change material electrical characteristics first principle ab initio method material-device characterization phase change memory resistance drift tellurium ternary alloys conductivity phase change materials phase change memory programming resistance temperature measurement
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Jing Li
Eduardo D. Glandt Faculty Fellow and Associate Professor, Co-director for CyberSavvy Center

Attracted to all the big problems in computer system across the stack regardless the specific sub-areas.