Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices

journal mosfet failure analysis probability random-access storage semiconductor device models semiconductor device reliability mos devices mosfet wfv grain orientation polycrystalline metal gate random dopant fluctuation size 22 nm static ram failure probability threshold voltage variability work-function variability integrated circuit modeling logic gates random access memory resource description framework semiconductor device modeling mosfets metal gate variability work function (wf)